Ahoujja, M.: search on Z-Library

Superlattices and Microstructures

Year:

2005

Language:

english

File:

PDF, 312 KB

english, 2005

Interface roughness scattering in thin quantum wells

S. Elhamri, M. Ahoujja, R. Hudgins, D.B. Mast, R.S. Newrock, W.C. Mitchel, M. Razeghi, M. Erdtmann

Journal:

Year:

1995

File:

PDF, 226 KB

1995

The effect of persistent photoconductivity in undoped GaInP/GaAs quantum wells

M. Ahoujja, S. Elhamri, R.S. Newrock, D.B. Mast, W.C. Mitchel, Manijeh Razeghi, M. Erdtman

Journal:

Superlattices and Microstructures

Year:

1995

File:

PDF, 212 KB

1995

Electrical and optical investigation of MBE grown Si-doped AlxGa1−xN as a function of Al mole fraction up to 0.5

M. Ahoujja, J.L. McFall, Y.K. Yeo, R.L. Hengehold, J.E. Van Nostrand

Journal:

Materials Science and Engineering: B

Year:

2002

Language:

english

File:

PDF, 129 KB

english, 2002

Impact of AlN interlayer on the transport properties of AlGaN/GaN heterostructures grown on silicon

S. Elhamri, W. C. Mitchel, R. Berney, M. Ahoujja, J. C. Roberts, P. Rajagopal, J. W. Cook Jr., E. L. Piner, K. J. Linthicum

Journal:

physica status solidi (c)

Year:

2008

Language:

english

File:

PDF, 225 KB

english, 2008

A magnetotransport study of AlGaN/GaN heterostructures on silicon

S. Elhamri, W. C. Mitchel, W. D. Mitchell, R. Berney, M. Ahoujja, J. C. Roberts, P. Rajagopal, T. Gehrke, E. L. Piner, K. J. Linthicum

Journal:

Journal of Electronic Materials

Year:

2005

Language:

english

File:

PDF, 151 KB

english, 2005

Transport coefficients of AlGaN/GaN heterostructures

M. Ahoujja, W. C. Mitchel, S. Elhamri, R. S. Newrock, D. B. Mast, J. M. Redwing, M. A. Tischler, J. S. Flynn

Journal:

Journal of Electronic Materials

Year:

1998

Language:

english

File:

PDF, 126 KB

english, 1998

Two-dimensional electron gas properties of AlGaN/GaN heterostructures grown on 6H–SiC and sapphire substrates

Redwing, J. M., Tischler, M. A., Flynn, J. S., Elhamri, S., Ahoujja, M., Newrock, R. S., Mitchel, W. C.

Journal:

Year:

1996

Language:

english

File:

PDF, 307 KB

english, 1996

[IEEE 10th International Semiconducting and Insulating Materials - Berkeley, CA, USA (1-5 June 1998)] Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) - Multi-layer conduction in epitaxial InSb grown on GaAs substrates

Ahoujja, M., Mitchel, W.C., Michel, E., Razeghi, M.

Year:

1998

Language:

english

File:

PDF, 193 KB

english, 1998

[IEEE 2000 International Semiconducting and Insulating Materials Conference. SIMC-XI - Canberra, ACT, Australia (3-7 July 2000)] 2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046) - Influence of arsenic doping on the electrical properties of GaN epitaxial layers grown by MOCVD

Ahoujja, M., Yeo, Y.K., Hengehold, R.L., Guido, L.J., Mitev, P., Johnstone, D.K., Kim, Y.H.

Year:

2000

Language:

english

File:

PDF, 238 KB

english, 2000

Electrical properties of boron-doped p–SiGeC grown on n[sup −]–Si substrate

M. Ahoujja, Y. K. Yeo, R. L. Hengehold, G. S. Pomrenke, D. C. Look, J. Huffman

Year:

2000

Language:

english

File:

PDF, 308 KB

english, 2000

Second subband population in δ-doped Al0.48In0.52As/Ga0.47In0.53As heterostructures

Lo, Ikai, Mitchel, W. C., Ahoujja, M., Cheng, J.-P., Fathimulla, A., Mier, H.

Journal:

Year:

1995

Language:

english

File:

PDF, 351 KB

english, 1995

P/GaAs quantum wells

Elhamri, Said, Ahoujja, M., Newrock, R. S., Mast, D. B., Herbert, S. T., Mitchel, W. C., Razeghi, Manijeh

Journal:

Year:

1996

Language:

english

File:

PDF, 143 KB

english, 1996

quantum wells

Lo, Ikai, Chen, S. J., Lee, Y. C., Tu, Li-Wei, Mitchel, W. C., Ahoujja, M., Perrin, R. E., Tu, R. C., Su, Y. K., Lan, W. H., Tu, S. L.

Journal:

Year:

1998

Language:

english

File:

PDF, 85 KB

english, 1998

Multiple subband population in delta-doped AlAsSb/InGaAs heterostructures

M. Ahoujja, S. Elhamri, R. S. Newrock, D. B. Mast, W. C. Mitchel, I. Lo, A. Fathimulla

Year:

1997

Language:

english

File:

PDF, 313 KB

english, 1997

As heterostructures

Lo, Ikai, Wang, D. P., Hsieh, K. Y., Wang, T. F., Mitchel, W. C., Ahoujja, M., Cheng, J.-P., Fathimulla, A., Hier, H.

Journal:

Year:

1995

Language:

english

File:

PDF, 257 KB

english, 1995

Sb/InAs quantum wells

Lo, Ikai, Chiang, Jih-Chen, Tsay, Shiow-Fon, Mitchel, W. C., Ahoujja, M., Kaspi, R., Elhamri, S., Newrock, R. S.

Journal:

Year:

1997

Language:

english

File:

PDF, 192 KB

english, 1997

Interface roughness scattering in thin, undoped GaInP/GaAs quantum wells

Mitchel, W. C., Brown, G. J., Lo, Ikai, Elhamri, Said, Ahoujja, Mohamed, Ravindran, K., Newrock, R. S., Razeghi, Manijeh, He, Xiaguang

Journal:

Year:

1994

Language:

english

File:

PDF, 563 KB

english, 1994

Degenerate parallel conducting layer and conductivity type conversion observed from p-Ge1−ySny (y = 0.06%) grown on n-Si substrate

Ryu, Mee-Yi, Yeo, Y. K., Ahoujja, M., Harris, Tom, Beeler, Richard, Kouvetakis, John

Journal:

Year:

2012

Language:

english

File:

PDF, 753 KB

english, 2012

Persistent photoconductivity in thin undoped GaInP/GaAs quantum wells

Elhamri, Said, Ahoujja, M., Ravindran, K., Mast, D. B., Newrock, R. S., Mitchel, W. C., Brown, G. J., Lo, Ikai, Razeghi, Manijeh, He, Xiaguang

Journal:

Year:

1995

Language:

english

File:

PDF, 251 KB

english, 1995

High carrier lifetime InSb grown on GaAs substrates

Michel, E., Mohseni, H., Kim, J. D., Wojkowski, J., Sandven, J., Xu, J., Razeghi, M., Bredthauer, R., Vu, P., Mitchel, W., Ahoujja, M.

Journal:

Year:

1997

Language:

english

File:

PDF, 244 KB

english, 1997

heterostructures: Effective mass and scattering times

Elhamri, S., Newrock, R. S., Mast, D. B., Ahoujja, M., Mitchel, W. C., Redwing, J. M., Tischler, M. A., Flynn, J. S.

Journal:

Year:

1998

Language:

english

File:

PDF, 81 KB

english, 1998

Donor-like Deep Level Defects in GaN Characterized by Double-correlation Deep Level Transient Spectroscopy

Ahoujja, Mo, Hogsed, M, Yeo, Y. K., Hengehold, R. L.

Journal:

Year:

2005

Language:

english

File:

PDF, 112 KB

english, 2005

Electrical Characterization of As and [As+Si] doped GaN Grown by Metalorganic Chemical Vapor Deposition

Ahoujja, M., Elhamri, S., Berney, R., Yeo, Y.K., Hengehold, R. L.

Journal:

Year:

2004

Language:

english

File:

PDF, 79 KB

english, 2004

Photoluminescence Characterization of Defects Introduced in 4H-SiC During High Energy Proton Irradiation and Their Annealing Behavior

Ahoujja, M., Crocket, H. C., Scott, M. B., Yeo, Y.K., Hengehold, R. L.

Journal:

Year:

2004

Language:

english

File:

PDF, 227 KB

english, 2004

Deep Levels in SiC:V by High Temperature Transport Measurements

Mitchel, W.C., Perrin, Ronald, Goldstein, Jonathan, Roth, Matthew D., Ahoujja, M., Smith, S.R., Evwaraye, A.O., Solomon, J.S., Landis, G., Jenny, Jason R., McD. Hobgood, H., Augustine, G., Balakrishna

Journal:

Materials Science Forum

Year:

1998

File:

PDF, 316 KB

1998

GaN Doped with Sulfur

Saxler, Adam W., Kung, P., Zhang, Xue Ren, Walker, D., Solomon, J., Ahoujja, M., Mitchel, W.C., Vydyanath, H.R., Razeghi, M.

Journal:

Materials Science Forum

Year:

1997

File:

PDF, 296 KB

1997

SPIE Proceedings [SPIE Optoelectronics '99 - Integrated Optoelectronic Devices - San Jose, CA (Saturday 23 January 1999)] Photodetectors: Materials and Devices IV - Electrical characterization of AlxGa1-xN for UV photodetector applications

Saxler, Adam W., Ahoujja, Mohamad, Mitchel, W. C., Kung, Patrick, Walker, Danielle, Razeghi, Manijeh, Brown, Gail J., Razeghi, Manijeh

Year:

1999

Language:

english

File:

PDF, 416 KB

english, 1999

Traps in Si-doped AlxGa1-xN Grown by Molecular Beam Epitaxy on Sapphire Characterized by Deep Level Transient Spectroscopy

Ahoujja, Mo, Elhamri, S, Hogsed, M, Yeo, Y. K., Hengehold, R. L.

Journal:

Johnstone, Daniel K., Ahoujja, Mohamad, Yeo, YungKee, Guido, Louis J., Brown, Gail J., Razeghi, Manijeh

Year:

2006

Language:

english

File:

PDF, 75 KB

english, 2006

SPIE Proceedings [SPIE Symposium on Integrated Optics - San Jose, CA (Saturday 20 January 2001)] Photodetectors: Materials and Devices VI - GaN deep-level capture barriers

Year:

2001

Language:

english

File:

PDF, 622 KB

english, 2001

Electrical properties of MBE grown Si-doped AlxGa1−xN as a function of nominal Al mole fraction up to 0.5

Ahoujja, M., Yeo, Y. K., Hengehold, R. L., Nostrand, J. E. Van

Journal:

Year:

2001

Language:

english

File:

PDF, 72 KB

english, 2001

InSb Detectors and Focal Plane Arrays on GaAs, Si, and Al203 Substrates

Michel, E., Mohseni, H., Wojkowski, J., Sandven, J., Xu, J., Razeghi, M., Vu, P., Bredthauer, R., Mitchel, W., Ahoujja, M.

Journal:

Year:

1996

Language:

english

File:

PDF, 875 KB

english, 1996

MID-IR Photodetectors Based on InAs/InGaSb Type-II Quantum Wells

Brown, G. J., Ahoujja, M., Szmulowicz, F., Mitchel, W. C., Lin, C. H.

Journal:

Hogsed, Michael R., Ahoujja, Mo, Ryu, Mee-Yi, Yeo, Yung Kee, Petrosky, James C., Hengehold, Robert L.

Year:

1997

Language:

english

File:

PDF, 1009 KB

english, 1997

Electrical and Optical Properties of 1 MeV-electron irradiated AlxGa1-xN

Journal: